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Thermal annealing effects on electrical characteristics of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diodes (SBDs) are investigated in the temperature range of 400–1100 °C. The thermal evolution of deep level traps in annealed SBDs is also analyzed by thermally stimulated capacitance (TSCAP) spectroscopy. As-deposited Ni/4H-SiC SBDs exhibited non-ideal electrical properties compared to Ti/4H-SiC SBDs...
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