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In this work, pectin, a by-product has not been recycled sustainably, is introduced as an insulator to fabricate a novel organic resistive switching memory devices with Ag/Pectin/FTO structure for the first time. The device exhibits superior switching endurance accompanied by an OFF/ON resistance ratio (storage density window) of ∼450. This work reveals for the first time that pectin from fruit peel is a promising material for nonvolatile memory applications.
Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, and Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
Institute of Fusion Science, School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, and Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China