The technology for making a specified (1-100) number of intrinsic Josephson junctions in Bi-2212 is reported. Measurements of the resistance during the fabrication process made it possible to avoid the in-plane contribution. The c-axis resistivity ρ c was about 30 Ω cm at 90 K and it obeyed an exponential law ρ c (T) exp(Λ/T), with Λ 43 meV, suggesting a thermally activated hopping mechanism of the c-axis transport. The c-axis gap parameter of an individual junction is about one half of that reported elsewhere and is strongly temperature dependent, suggesting proximity induced superconductivity of the intermediate Bi-O layers in Bi-2212.