The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The purpose of this paper is the investigation of the dehydrogenation kinetics of boron nitride films during thermal annealing. BN x :H films on silicon substrates were prepared by remote plasma enhanced chemical vapour deposition at 473 K using a mixture of borazine and helium. IR spectroscopy and ellipsometry were used to characterize the film properties and composition. The films contain a certain amount of hydrogen in B-H and N-H bonds. The breakage kinetics of these bonds is different. The breakage of N-H bonds determines the hydrogen annealing kinetics at 973-1073 K. The low-temperature annealing (673-873 K) of B-H bonds is sensitive to the generation of hydrogen from N-H bonds. Heat treatment leads to ordering of the films.