The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Passivation treatment on indium-doped Hg 0.8 Cd 0.2 Te epitaxial layers grown on p-Cd 0.96 Zn 0.04 Te substrates by molecular beam epitaxy has been performed in order to improve the surface stability of the Hg 0.8 Cd 0.2 Te layers. Room-temperature capacitance-voltage measurements clearly revealed metal-insulator-semiconductor (MIS) behavior for the Al/ZnS/passivated Hg 0.8 Cd 0.2 Te layer/Cd 0.96 Zn 0.04 Te diodes. The fast state density and the fixed charge density of the Al/ZnS/passivated Hg 0.8 Cd 0.2 Te/Cd 0.96 Zn 0.04 Te diode with a sulfur-treated Hg 0.8 Cd 0.2 Te layer were smaller than those with a chemically oxidized Hg 0.8 Cd 0.2 Te layer. The interface state density at the ZnS/sulfur-treated Hg 0.8 Cd 0.2 Te interface were low at 10 11 eV -1 cm -2 at the middle of the Hg 0.8 Cd 0.2 Te energy gap. These results indicate that the Hg 0.8 Cd 0.2 Te epilayer is significantly passivated by sulfur treatment and that the passivated Hg 0.8 Cd 0.2 Te layers can be used for Hg 1-x Cd x Te-based MIS diodes and MIS field-effect transistors.