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A suitable new type of substrate RESrAlO 4 (RE=Nd and La) for making Bi2212 thick films has been synthesized by solid state reaction. X-ray diffraction indicated that both compounds are single phase when synthesized at 1350-1500 o C. The compounds are both of tetragonal structure and have high melting points together with low dielectric constants and energy loss. They are chemically compatible with Bi2212. Strongly c-axis oriented Bi2212 thick films with a T co of 85 K were successfully grown on the polycrystalline substrates. RESrAlO 4 is suitable for use as a substrate material for growing Bi-Sr-Ca-Cu-O (BSCCO) thick films for microwave devices.