This work experimented on the TEOLED (Top-emitting Organic Light-Emitting Diode) using the TiN (titanium nitride) as the anode for the microdisplays based on the CMOS (Complementary Metal–Oxide–Semiconductor) integrated circuit substrate. TiN is a hard, dense, and refractory material with steady physical and chemical characteristics. It is proved in this work to be a good candidate for the anode of the TEOLED due to its good electrical and optical characteristics. A SXGA resolution OLED microdisplay is designed and developed with TiN anodes. The luminance reaches beyond 2700cd/m2 when the operating voltage is below 5V. The power efficiency reaches 13lm/W at the luminance of 1000cd/m2. As a conclusion, TiN can be used to solve the incompatibility problem between the CMOS process and the OLED process. By fabricating the top metal coated with TiN as the TEOLED anodes in the standard CMOS process, it is not necessary to build a new separate post-process line for the anodes in the mass manufacture. Hence, the process step for the CMOS-based OLED microdisplay will be simplified, huge cost will be saved and the production yield will also be improved.