It has been observed that phosphorous incorporation (1 wt.% as P 2 O 5 ) in Pb(Zr 0.52 Ti 0.48 )O 3 [PZT] ceramics can lead to an appreciable densification (98%) at a temperature as low as 1050 °C. The impedance of the samples initially increases with the increase in phosphorous addition (up to 2 wt.% P 2 O 5 ) followed by a decrease after further addition. The enhancement of dielectric constant and dielectric loss at low frequencies, especially for the sample containing 4 wt.% P 2 O 5 , suggests Maxwell–Wagner relaxation. Although the d 33 and g 33 values decrease with the phosphorous addition, PZT containing 1 wt.% P 2 O 5 can be used as a cost-effective substitute of pure PZT for low-end applications.