In this work, we studied a TiO 2 mixed LaAlO 3 dielectric (TLAO) for metal–insulator–metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2fF/μm 2 and a low leakage current of 7.5×10 −7 A/cm 2 at −1V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al 2 O 3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO 2 -based dielectrics with the introduction of Al 2 O 3 might be favorable for the improved engineering of MIM capacitors.