Quantum wells were grown by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) with the growth modes of step propagation, 2D nucleation and a combination of both. The surface structure on the multilayer was characterized by atomic force microscopy (AFM). Photoluminescence (PL) spectra from quantum wells with such well controlled and characterized interfaces were obtained for the first time. PL linewidths were explained by the observed surface structures and growth modes.