Atomic layer deposition of hafnium dioxide (HfO 2 ) on silicon substrates was studied. It was revealed that due to low adsorption probability of HfCl 4 on silicon substrates at higher temperatures (450-600 o C) the growth was non-uniform and markedly hindered in the initial stage of the HfCl 4 -H 2 O process. In the HfI 4 -H 2 O and HfI 4 -O 2 processes, uniform growth with acceptable rate was obtained from the beginning of deposition. As a result, the HfI 4 -H 2 O and HfI 4 -O 2 processes allowed deposition of smoother, more homogeneous and denser films than the HfCl 4 -H 2 O process did. The crystal structure developed, however, faster at the beginning of the HfCl 4 -H 2 O process.