Diamond scanning probes are routinely used today for characterizing nanoelectronics device structures with electrical atomic force microscopy (AFM), in particular by scanning spreading resistance microscopy (SSRM). As the most advanced devices are reaching sub-10nm dimensions soon, the diamond probes need to be further improved both in terms of spatial resolution (to resolve sub-nanometer features) and electrical conductivity (to probe also highly doped regions). Therefore, we have developed an improved microfabrication process based on 200-mm Si wafer technology for fabricating full diamond tips (FDTs) by the molding technique. The molded FDTs are integrated into metal cantilevers and are fixed to millimeter-size holder chips for probe handling. The key aspects of our improved fabrication process are higher-density seeding inside the pyramidal molds (~3.5E10cm−2) and the switch in diamond growth mode from nanocrystalline diamond (NCD) to microcrystalline diamond (MCD) leading to higher resolution and electrical conductivity. Another achievement of this work is the establishment of adequate physical and electrical tip characterization procedures allowing to quantitatively assess the tip performance. This work presents the fabrication scheme, shows manufactured probe devices and discusses probe characterization in detail.