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ZrO 2 dielectric films were deposited on Si substrates by reactive magnetron sputtering technique. Interfacial and optical properties were investigated. Crystal structure was studied by X-ray diffraction. Fourier Transform Infrared Spectroscopy analysis confirmed the presence of a low-k interfacial SiO 2 layer due to the excited oxygen radicals in the sputtering plasma and the physisorbed oxygen in as-deposited ZrO 2 films. Optical constants were extracted based on the best spectroscopic ellipsometry fitting results. Absorption coefficients near the absorption edge were also calculated. The absorption tails in the range 4.5–4.75 eV indicated that there was a defect energy level below the conduction band of ZrO 2 due to oxygen vacancies.
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Science, P.O.Box 1129, Hefei 230031, People's Republic of China
Electronic and Electrical Engineering, University College London, Torrington Place, London WCIE 7JE, UK
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Science, P.O.Box 1129, Hefei 230031, People's Republic of China
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Science, P.O.Box 1129, Hefei 230031, People's Republic of China
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Science, P.O.Box 1129, Hefei 230031, People's Republic of China