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Mn-doped 3C-SiC film has been prepared onto the Si (111) substrate by employing a molecular beam epitaxy method. The experimental analysis establishes that the prepared sample shows the ferromagnetic property with a relatively high Curie temperature (Tc) of 355K, which is an exciting phenomenon on account of the scarceness in the SiC-based diluted magnetic semiconductor. The analysis derived from...
The transition between the a(1×3) and c(4×4) surface reconstructions of InSb(001) has been carefully monitored by reflection high energy electron diffraction as a function of temperature and Sb2 flux, without incident In flux. Arrhenius-like behaviour is observed across the whole range of Sb2 fluxes and temperatures, allowing accurate internal calibration of substrate temperature. This behaviour is...
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