In order to investigate the temperature effects on the dynamic radiation damaging process, we have carried out in situ measurements of in-reactor luminescence (IRL) and gamma-ray induced luminescence (GIL) of a silica glass at temperatures ranging from 70 K to 370 K. Both luminescence spectra were found to consist of two broad emission centers at 3.1 eV and 4.1 eV with an additional temperature independent emission around 2.5 eV. The 2.5 eV emission different from the other two showed long tail to the lower energy side and was attributed to the Cherenkov radiation. The 3.1 eV band was attributed to a B 2 β oxygen deficient center on the basis of our photoluminescence measurement. The intensity of the 3.1 eV IRL increased with increasing temperature up to ca. 200 K and saturated above 200 K, which is clearly different from the reported temperature dependence of 3.1 eV photoluminescence, suggesting the existence of some different relaxation mechanism of excited electron under ionizing radiations.