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This study investigates the behavior of SiOC as gate dielectric materials for zinc-based oxide semiconductor thin film transistors (TFTs). The SiOC with a high potential barrier due to a low ionic energy at a Poole–Frenkel (PF) contact was suitable for use as a gate dielectric material to support tunneling in ZnO/SiOC TFTs. The performance of the ZnO TFTs for the low-polarization SiOC improved by...
In this article we present a mechanism for creating metastable defects in intrinsic hydrogenated amorphous silicon (a-Si:H) layers by changing the flow-rate ratio of SiH4 and H2. This is an important cardinal property that restricts the performance of both solar cells and thin-film transistors (TFT). Light or electrical bias results in generation of metastable dangling bonds. We evaluated the gas...
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