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Hexagonal boron nitride (h-BN) films were deposited onto a graphite substrate in reduced pressure by reacting ammonia and boron tribromide at 800-1200 o C. The growth rate of h-BN films was dependent on the substrate temperature and the total pressures. The growth rate increased with increasing the substrate temperature at the pressure of 2 kPa, while it showed a maximum value at the pressures...
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