InN-based dilute magnetic semiconductor DMS In 1 - x Mn x N and In 1 - x Cr x N films were prepared on Al 2 O 3 substrates at low temperature by RF-plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction, X-ray diffraction and atomic force microscopy show Mn was homogeneously incorporated into InN up to 4% and 10%, respectively, at 300 o C and 200 o C, while Cr was incorporated up to 4% at 300 o C. In 1 - x Mn x N films with Mn composition x=0.04 showed a paramagnetic behavior at low temperature, whereas a paramagnetic to spin-glass transition was observed at 3K in In 0 . 9 Mn 0 . 1 N films grown at lower temperature (200 o C). Homogeneous In 0 . 9 8 Cr 0 . 0 2 N films grown at 300 o C showed clear ferromagnetic properties with Curie temperature higher than 350K.