Conductivity and photoconductivity measurements of hydrogenated amorphous silicon (a-Si:H) prepared by homogeneous chemical vapor deposition (HOMOCVD) are reported. The conductivity activation energy (E a ) has been varied by changing the substrate temperature. It was found that the conductivity of HOMOCVD a-Si:H follows the Meyer-Neldel rule. The fundamental characteristics G = 31 eV - 1 and σ 0 0 = 2.10 - 4 (Ω.cm) - 1 have been calculated. The values determined correspond to a very low gap state density for HOMOCVD a-Si:H. The relations between E a , photoconductivity (σ p h ), photosensitivity (σ p h /σ d ), and the optical Tauc parameter B have been demonstrated. The shift of the Fermi level towards E c has been established in dependence of the substrate temperature.