In the present paper we demonstrate that some important experimentally observed features of so-called weak localization, a quantum-mechanical effect par excellence which is rather difficult to treat directly by application of formalism of quantum electrodynamics, may be alternatively on a quite elementary level treated quasi-classically using the concept of zero-point electromagnetic fluctuations as introduced in stochastic electrodynamics. Such an approach was applied to an analysis of original experimental data obtained on InP-based semiconductor structures with δ-layers, i.e. self-consistent two-dimensional system which is known to enable investigation of the WL effect at appreciably high temperatures.