Polycrystalline tin sulfide (SnS) thin films were grown on conducting glass substrates by pulse electrodeposition. The effect of annealing on the physical properties such as structure, morphology, optical, and opto-electronic properties were evaluated to understand the effect of post-deposition treatment for SnS films. Annealing at temperatures higher than 250°°C resulted in the formation of SnS 2 as a second phase, however, no significant grain growth or morphological changes were observed for films after annealing at 350°C. A small change in band gap of 0.1eV observed for films annealed at 350°C was interpreted as due to the formation of SnS 2 rather than due to morphological changes. This interpretation was supported by X-ray diffractometry, scanning electron microscopy, and Raman spectral data. The electric conduction in the films is controlled by three shallow trap levels with activation energies 0.1, 0.05, and 0.03eV. The trap with energy 0.03eV disappeared after annealing at higher temperature, however, the other two traps were unaffected by annealing.