In this study, we compared the line edge roughnesses (LER) and profile angles of chemical vapor deposited (CVD) amorphous carbon (a-C) patterns etched in an inductively coupled plasma (ICP) etcher produced by varying process parameters such as the N 2 gas flow ratio, Q (N 2 ), and dc self-bias voltage (V dc ) in O 2 /N 2 /Ar and H 2 /N 2 /Ar plasmas. The tendencies of the LER and profile angle values of the etched CVD a-C pattern were similar in both plasmas. The LER was smaller in the O 2 /N 2 /Ar than in the H 2 /N 2 /Ar plasmas, and the profile angle was larger in the O 2 /N 2 /Ar than in the H 2 /N 2 /Ar plasmas under the same processes conditions. The use of O 2 /N 2 /Ar plasma was more advantageous than the H 2 /N 2 /Ar plasma for controlling LER and profile angle.