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A method of mapping 3D periodic structures in the micron- and submicron range is presented. The method consists of implanting alpha-emitting nuclei close to the surface and measuring the emerging alpha-particles at various directions. Information about surface topography is then obtained from the number of alphas that are observed directly by the detector. Measuring the shift in energy due to deposition of overlayers permits the analysis of the conformality of films deposited on complex periodic structures. Typical applications include the characterization of gratings in semiconductor layers fabricated during the production of laser structures and of quantum wires. An experimental example for periodic V-grooves etched in GaAs is shown.
Department of Nuclear Physics, The Raymond and Beverly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel Aviv University, Tel Aviv 69978, Israel