Tl-containing III-V semiconductors are expected to produce temperature-insensitive wavelength laser diodes, which are important in wavelength division multiplexing optical fiber communication systems. TlInGaAs/InP double heterostructure lasers were grown by gas source MBE. Temperature variation of electroluminescence emission peak wavelength as small as 0.064nm/K (0.047meV/K) was observed. Current injection pulsed laser operation was obtained up to 310K. The threshold current density was about 5kA/cm 2 at 1.66μm at room temperature. T 0 value was about 90K. CW operation was also obtained at 77K.