We propose a CVD reaction scheme in which a source material undergoes a gas-phase reaction to produce an intermediate, and then the intermediate diffuses to the solid surface and changes into a solid film through a surface reaction. A series of simple Monte Carlo (SMC) codes has been developed to simulate the observed film shape on micro-trenches and holes. By using these codes, surface reaction rate constants were determined so as to reproduce the experimentally observed film shape. By means of a macro-scale reactive transport analysis of a hot wall tubular reactor, gas-phase reaction rate constants for single component systems were determined to simulate the experimental growth rate distributions. The composition and growth rate of Yttria stabilized Zirconia (YSZ) film, a solid solution of Yttria and Zirconia, were qualitatively explained by a sum of single component's growth rates. As an application of these reaction models, we simulated a rotating-disk CVD reactor under low pressure. The simulations based on a quasi three-dimensional model revealed that the susceptor rotation suppresses the buoyancy convection and forms steeper gradients in temperature and concentration near the susceptor uniformly over wide area. At higher temperatures, the growth rate increased with rotation speed, but at lower temperatures the growth rate decreased with increasing rotation speed because the reduced retention time in the high-temperature region suppressed the gas-phase reaction.