Rhenium was deposited in porous silicon by Chemical Vapour Infiltration and Deposition (CVID) using a deuterium rhenium carbonyl DRe(CO) 5 precursor. The results indicate that the precursor penetrates into the pores and reaches a saturation level very quickly (in less than 2 min) to give a uniform rhenium concentration of 8-10 at% of the silicon content to a measurable depth of at least 1.5 μm. High levels of oxygen were also observed at ∼ SiO 1 . 5 . In addition to having a high level of carbon at about one third of the oxygen level, the carbon content of the samples dropped during analysis, suggesting that it was present in a volatile form.