The effects of developer temperature and post-exposure bake (PEB) in photoresist processing are investigated. Results are presented in terms of their computer simulation parameters using the Mack development model and show that, for the resist/developer system used, the values of R m a x and n increase with developer temperature, whilst m t h changes only when the PEB step is varied. Increasing the PEB temperature reduces all 3 parameters. Practically, these results bring about an improvement in resolution with increasing developer temperature but a degradation as PEB temperature increases. The optical proximity effect known as dense/isolated offset can be eliminated by careful selection of an intermediate development temperature.These results reported improve the correlation between practical and simulated results and may suggest process changes which may enhance performance in production conditions.