We demonstrate InAs growth on the top of GaAs pyramidal structures formed by selective area MOVPE, and show a successful achievement of the position controlled self-organized InAs quantum dots. First, GaAs pyramidal structures are selectively grown on GaAs (001) substrates with SiN x masks which have circular opening patterns in 150nm diameter, and in 160-500nm periodicity. Next, InAs layer is grown on GaAs pyramids. In this case, InAs dots are preferentially formed on the top portion of the pyramids. Finally, GaAs capping layer is overgrown on InAs dots. Photoluminescence (PL) spectrum shows strong emission from InAs quantum dots formed on the top portions of the pyramids.