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ZnO-core/SiO x shell nanowires were successfully fabricated and their morphology, structure, Raman and photoluminescence properties were examined. Not only the sputter-coated product had an one-dimensional morphology, but the tubular structure of SiO x shell was also continuous, smooth, and uniform, along the core nanowires. It was found that two fundamental modes (334, 437 cm ...
ZnO films thin films have been deposited on glass and three different LiNbO 3 (LNO) substrates at room temperature using radio frequency magnetron sputtering. The structure and optical properties of the films were investigated by X-ray diffraction (XRD), optical transmission spectroscopy and spectro-photometry. XRD analysis shows that all the films are hexagonal wurtzite structure, and there...
Au intermediate ZnO (ZAZ) thin films were prepared by radio frequency and direct current magnetron sputtering on glass substrates and then vacuum annealed. The thickness of each layer of the ZAZ films was set at 50 nm, 3 nm, and 47 nm, respectively. The structural, electrical, and optical properties of ZAZ films were investigated with respect to the variation of annealing temperature.As-deposited...
Nanocrystalline Zn 1−x Mn x O (where x = 0, 0.02, 0.1) powders and thin films were prepared by a polymeric precursor method and pulsed laser deposition, respectively. The wet chemistry method was chosen to synthesize the powders in order to improve key parameters as purity and grain-size distribution. Optimization procedures, encompassing substrate temperature, laser fluence and background...
Seed mediated aqueous chemical growth (ACG) route was used for the growth of ZnO nanostructures on Si substrate in four different growth mediums. The growth medium has shown to affect the morphology and the size of the different nanostructures. We observed that the medium containing zinc nitrate anions yields the nanorods, in a medium containing zinc acetate anions nano-candles are obtained. While...
Herein one-dimensional Sm-doped ZnO nanostructures have been successfully fabricated by a simple hydrothermal method at a low temperature of 90 °C. The effect of Sm doping on the microstructure, photoluminescence and magnetism of ZnO nanorods is also investigated. FE-SEM images show that the average diameter of the Sm-doped ZnO nanorods is obviously smaller than that of ZnO nanorods. Photoluminescence...
Nanocrystalline (average crystal size ∼ 3–4 nm) ZnO have been prepared by chemical route. Employing positron annihilation techniques these nanocrystalline ZnO have been characterized. Positron annihilation lifetime spectroscopy indicates the presence of large number of vacancy defects at the surface of these nanocrystaline ZnO. A large percentage of positronium formation has been observed in this...
Transparent conductive Al-doped ZnO (AZO) thin films with various thicknesses between 520 and 1420 nm were deposited on quartz substrates by radio frequency (RF) magnetron sputtering at room temperature for thin film solar cells as transparent conductive oxide (TCO) electrode layers. After deposition, the samples were annealed in a vacuum ambient at temperatures between 250 and 550 °C for a period...
(0001) α-Al 2 O 3 single crystals (sapphire) were implanted with Zn + ions at 60 keV to fluences of 1 × 10 17 and 2 × 10 17 ions/cm 2 ; and were then annealed at different temperatures under oxygen ambient. Transmission electron microscopy and optical absorption spectra were used to investigate the formation of nanostructure and their thermal evolution...
We make a comparison on the photoluminescence (PL) from the Mg 0.1 Zn 0.9 O film and ZnO nanoflakes (NFs) over the range of 10–300 K. It is clear that their PL spectra are dominated by the radiative recombination of localized or bound excitons at 10 K. As the temperature increases, these excitons are gradually converted toward free excitons (FX) or annihilate through a thermal dissociation/activation...
ZnAlO films alloyed with various group-II elements (Be, Mg, Ca, Sr) were sputter grown and its effects on the optical and electrical properties of the films were studied. It was observed that addition of Be most efficiently increases the Eg (∼3.8 eV) but results in high resistivity (0.5 Ωcm), while an addition of Mg resulted in a relatively low resistivity (∼7 × 10 −4 Ωcm) and moderate increase...
The Au–ZnO nanowire films have been synthesized in two steps by combining the chemical routes, i.e. electrochemical deposition (ECD) and chemical bath deposition (CBD) techniques, and annealing process in air at 400 °C on zinc foil. The X-ray diffraction patterns exhibit formation of the ZnO wurtzite structure along with binary phases Au 3 Zn and AuZn 3 . The scanning electron microscope...
The effect of rapid thermal annealing temperature on the structural and electrical properties thin ZnO films grown on GaAs substrate by atomic layer deposition is thoroughly investigated. X-ray diffraction analysis show that atoms interdiffusion can be observed at the interface of ZnO/GaAs heterostructures after annealing in oxygen ambience at elevated temperatures. Moreover, the conductivity of ZnO...
In this research article deep level green luminescence quenching, stability of ultraviolet excitonic emission and structural properties of composite (ZnO) 1−x (Cr 2 O 3 ) x (x = 0, 5, 10 and 15 mol%) are investigated. X-ray diffraction has demonstrated polycrystalline wurtzite structured ZnO and established proper incorporation of Cr 3+ at most likely on the...
Based on the p-NiO/n-ZnO nanowire (NW) heterojunction structure, a high-performance ultraviolet (UV) sensor has been achieved in this work. The sputtered p-type NiO exhibited good coverage on the hydrothermally-grown n-type ZnO Nano-Wires (NW's). The devices with 250-nm-thick NiO obtained the highest UV light sensitivity (I UV /I Dark = 4.98; I Visible /I Dark = 3...
The structural, optical and magnetic properties of Zn 46 Co 2 O 48 nanowires are studied by first-principles calculations. The energy calculated results show that ferromagnetic coupling is the most stable for two Co atoms substituting for two Zn atoms at inner layer along the [0001] direction (configuration I). The ferromagnetic coupling between Co atoms is mediated by the...
Flower-like morphology of ZnO thin films were successfully electrodeposited via a one-step route only by changing electrodeposition duration and potential at a fixed concentration on n-Si (100) in 78.10−4 M Zn (NO3)2, 6H2O and 0.1 M KNO3 solution at 70 °C without using any catalyst, additives or seed layer. The as electrodeposited products were characterized by X-ray diffraction, scanning electronic...
Structural and optical properties of ZnO1−xSx (0 ≤ x ≤ 1.0) thin films grown onto sapphire substrates (≿-Al2O3) at 300 °C by radio frequency (rf) magnetron sputtering of ZnS ceramic target are studied. A possibility of purposeful controlling sulfur content and, as consequence, ZnO1−xSx band gap energy via changing the ratio of the partial pressures of argon and oxygen are revealed. Linear dependence...
In this study, three film samples (ZnO, ZnS and ZnO/ZnS heterojunction) were prepared by a facile magnet sputtering deposition method. All the films exhibited the good crystal quality and smooth surface. Further, the X-ray photoelectron spectroscopy (XPS) was employed to examine the band offset between ZnO and ZnS layers at the interface. It was demonstrated that the ZnO/ZnS bilayers exhibited a II-type...
We have measured the band offsets of sputtered ZrSiO4 on bulk ZnO wafers using X-Ray Photoelectron Spectroscopy and obtained the bandgaps of these two materials using reflection electron energy loss spectroscopy. The valence band offset was determined to be −0.60 eV ± 0.04 eV for ZrSiO4 on ZnO, while the respective bandgaps were 3.22 eV for ZnO and 5.9 eV for ZrSiO4. The conduction band offset for...
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