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We have studied the surface morphology of natural single crystal diamond chips machined by 0.5–3.0keV Ar + ion beam irradiation at ion incidence angles of 0°, 30°, 45°, 60°, and 80° with ion doses from 3.4×10 18 ions/cm 2 to 6.8×10 18 ions/cm 2 . The surface of diamond chips machined with 0.5 and 1.0keV Ar + ion beam, at angles of ion incidence from...
Nucleation is a very important step in synthetic diamond thin film growth process and generally the incubation time for the stable diamond nuclei formation is very long. We can consider it to be a pre-treatment of the Si substrate surface before diamond film deposition.In this study we have investigated the synthetic diamond thin film nucleation mainly on Si substrates by the ultrasonication in different...
This article is a brief review on syntheses of materials with extreme properties and their modification by plasma processes to obtain different morphological structures. First we illustrate general methodologies on preparation of polycrystalline diamond (PD), nanocrystalline diamond (ND), cubic boron nitride (cBN), diamond/cBN multilayer films by low pressure methods. Since cBN synthesis is more challenging,...
The internal stress in high-quality (111) homoepitaxial diamond film grown on high-pressure high temperature (HPHT) synthesized single crystal diamond substrate by chemical vapor deposition (CVD) can be reduced effectively by embedding Au islands in diamond. Au islands formed from an Au layer deposited on the diamond substrate by electron beam evaporation can be obtained after hydrogen plasma annealing...
The pure oxygen was introduced into the growth environment of the single crystal diamond with different contents, and the growth characteristics of single crystal diamond and the reaction dynamics in the plasma were studied in detail. As the ratio of O2 to H2 is up to 1.5%, the unique shaped etching pits with eight symmetric crystallographic planes appear. Optical emission spectra present typical...
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