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Titanium-doped unhydrogenated amorphous silicon (a-Si: Ti) films were prepared by rf co-sputtering. Structural, optical and electrical properties of a-Si: Ti as a function of Ti content were investigated by RBS(Rutherford Backscattering Spectrometry), XPS(X-ray Photoelectron Spectroscopy), Raman, ESR (Electron Spin Resonance), Spectroscopic Ellipsometry, thermoelectric tests and temperature dependent...
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