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A multicrystalline silicon ingot was obtained from metallurgical-grade silicon by vacuum induction melting and directional solidification. Based on the concentration distributions of aluminum and calcium along the growth direction, the removal mechanism of such impurities with both high saturated vapor pressures and low segregation coefficients is investigated. The results show that the removal of...
Sputtering and secondary ion emission (SIE) from semiconductors with different values of the band gap have been studied experimentally and by means of computer simulation. The particular oscillations of secondary ion energy distribution for graphite, sapphire, and silicon single crystals were observed under irradiation by 1 and 10 keV Ar + ions. This result cannot be interpreted using existing...
Rutherford Backscattering Spectroscopy measurements were carried out on p-type silicon prior to and after metal diffusion in order to determine the amount of diffused metal. The metals used were gold, platinum, erbium and niobium. The amount of the diffused metals was estimated by using the peak heights of the spectra. In all cases the heights become smaller after diffusion to show a reduction in...
We report the fabrication of InN nanostructure sensitive photodetector grown expitaxially on a silicon (110) substrate by RF sputtering at room temperature. X-ray diffraction measurement shows that the deposited InN film has (101) preferred growth orientation and wurtzite structure. The platinum (Pt) Schottky contact was deposited via thermal vacuum evaporation (10 −5 Torr) by using a metal...
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