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β-In 2 S 3 thin films have been obtained by solid-state reaction, induced by annealing for half an hour under constant argon flow, between the constituents sequentially deposited in thin layers by vacuum thermal evaporation. The films obtained after annealing at 623, 673 and 723K are crystallized in β-In 2 S 3 tetragonal structure without any preferential orientation...
Thin films from the Se 45.5 Ge 30.3 Tl 24.2 system have been prepared by thermal evaporation. The current-voltage characteristics in the temperature range 290-373K and the thickness range 98-400nm are ohmic in the lower field regime followed by non-ohmic behaviour in the higher voltage regime which has been satisfactorily explained...
Plasma source low-energy ion-enhanced deposition is a new approach for the deposition of thin films on steel and alloys with specific advantages over ion beam-enhanced deposition (IBED) and the complex combined plasma source ion implantation (PSII) and IBED (PSII-IBED). It may be used to develop a thin film process using the plasma-based low-energy ion implantation including plasma source ion nitriding...
In order to reduce the activation temperature of the TiZrV alloy, thin films of various compositions were produced by three-cathode magnetron sputtering on stainless-steel substrates. For the characterisation of the activation behaviour the surface chemical composition has been monitored by Auger electron spectroscopy (AES) during specific in situ thermal cycles. The volume elemental composition of...
An amorphous iron nitride thin film was deposited using reactive ion beam sputtering of iron by a beam of argon and nitrogen ions. Nitrogen content in the film as determined from conversion electron Mossbauer spectroscopy (CEMS) and X-ray photoelectron spectroscopy (XPS) was FeN 0.7 . The mass density of the film was calculated using energy-dispersive X-ray reflectivity (EDXRR) measurements...
We have presented new schemes to analyse grazing incidence specular X-ray reflectivity data to obtain structural and chemical information of thin films. Analysis of specular reflectivity data gives information along the depth of the film, whereas, analysis of non-specular data reveals the structural information across the film surface and interfaces. The schemes proposed are based on the Born approximation...
Silicon nitride and silicon oxynitride dielectric layers were fabricated by reactive RF sputtering from an Si target in conventional equipment. Sputtering was done using a gas mixture of high-purity nitrogen and oxygen at a total pressure of 2-3Pa. To investigate the sputtering process parameters silicon nitride was deposited on polished slices of Si. Multiple angle incidence ellipsometry was applied...
In this paper we propose a mathematical model for calculating the XPS intensity distribution from textured sample surfaces covered with a thin film. The surface roughness is approximated using triangular prisms. Analytical expressions for calculation of the angular photoelectron intensity distribution are given. The obtained results allow an understanding of the relation between the escape depths...
We report, for the first time, results on transparent ZnO:Al thin films deposited on polyester (Mylar type D, 100μm thickness) substrates at room temperature by magnetron sputtering. The structural, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular...
CuInTe 2 films were synthesized by graphite box annealing of In/Cu/Te stacked elemental layers (SEL) deposited by evaporation onto glass substrates. The films were polycrystalline with preferential orientation in the (112) direction. Lattice constants (a=0.62nm, c=1.24nm) were determined from the X-ray diffraction analysis. The optical band gap, determined from transmittance spectra, varied...
Stoichiometric Fe 3 C films of Fe:C=75:25 were prepared by a new PVD method called the electron shower using C 2 H 2 gas. The crystalline size was 30-70nm and the deposition rate was 0.3-0.9nm/s. When Fe 3 C film was immersed in 1wt% NaCl solution as soon as it was synthesized, its corrosion resistance was only 2 times higher than that of Fe metal. The corrosion products...
Carbon nitride film was prepared on silicon substrate by an rf magnetron sputtering with a graphite target. Nitrogen-argon mixture gas was employed. To investigate effect of ion bombardment on film hardness, negative bias voltage was applied on the substrate, and a gas flow ratio of argon to nitrogen was changed. The rf power was kept at 300 or 650W. The film was characterized by XPS, a microhardness...
Recent extensive studies of triboemission of electrons revealed a key role of insulating capabilities of solids forming sliding contact on the intensity and behavior of emission processes. Also, it was found that the dominating emission mechanisms differ for insulators and conductors. In consideration of these substantially different natures of electron triboemission from solids of different insulating...
Effect of 100MeV 58 Ni +8 ion irradiation on the electrical transport behaviour of Al-Cu-Fe quasicrystalline thin films have been investigated by in situ and ex situ resistivity measurements. The quasicrystalline thin films grown by indirect heating, electron-beam and flash evaporation methods have been used for this purpose. The fluence of 100MeV 58 Ni +...
KrF excimer laser ablation of a Mg-B target at different pressures and laser powers was investigated. Special care was taken to minimize Mg oxidation in the laser-induced plasma by introducing H 2 in the Ar background gas. Optical emission spectroscopy was used for a preliminary study of the dependencies of different emission line intensities in the plasma plume. The time evolution of optical...
The oxygen content in the gas mixture and post-deposition annealing temperature are important parameters affecting the structural properties and surface morphology of thin NiO films. These films were produced by reactive DC magnetron sputtering on Si and alumina substrates. The oxygen content varied from 20% to 60%. Thin film deposition was performed in both metallic and poisoned operation modes and...
Sputtered silicon has been investigated as a low temperature bonding layer for microelectronic applications such as silicide on silicon on insulator, thin film transistors, micromachining and temperature sensitive substrates; sputtered silicon acting as a replacement for polysilicon with a deposition temperature around 600 o C. For wafer bonding, a deposited layer must have sub-nanometer roughness,...
The island behavior during discontinuous film formation was modeled by numerical simulation. Several experimentally found phenomena were simulated, namely dissolution of big islands, displacement of islands during growth in non-uniform diffusion field, coalescence and induced dissolution of islands. The results obtained show that the above phenomena can be in principle described in terms of a continuous...
The electrical and optical properties of silver indium selenide thin films prepared by co-evaporation have been studied. X-ray diffraction indicates that the as prepared films were polycrystalline in nature. The lattice parameters were calculated to be a=0.6137 and b=1.1816nm. Composition was determined from energy dispersive analysis of X-ray. Silver indium selenide thin films were also prepared...
La 0.5 Sr 0.5 CoO 3 (LSCO) thin films were prepared using metal-organic decomposition method by spin-coating onto a Si (100) substrate. Both the structure and morphology of the films were analyzed by X-ray diffraction and atomic force microscope. The LSCO thin films annealed at 550-700 o C for 1h showed a polycrystalline phase and dense microstructure...
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