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Implantation of N ions with doses of 3×1016 and 3×1017cm-2 and energies of 100keV into semiinsulating (100) GaAs substrates has been performed in order to synthesize the GaN compound. The samples have been annealed in a furnace at 750°C for 30min in N gas flow or under GaAs powder and then characterized by 300 and 77K cathodoluminescence, infrared reflection, Raman spectroscopy and secondary ion mass...
The present work provides results for amorphous hydrogenated carbon (a-C:H) films deposited by a direct ion beam deposition method. Acetylene (C 2 H 2 ) precursors and their mixture with hydrogen (H 2 ) were used. The films were characterized by Raman spectroscopy (RS) and ellipsometry measurements. RS indicates an increase of sp 3 /sp 2 bonding ratio and disorder...
(100)-textured chemival vapor deposited (CVD) diamond films were deposited on both ultrasonically roughened and manually scratched silicon substrates using hot-filament chemical vapor deposition (HFCVD). Scanning electron microscopy (SEM), Raman spectroscopy, X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR) and thermally stimulated current (TSC) were used to characterize the...
Diamond-like carbon thin films (DLC) with increased thermal stability were prepared by filtered pulsed laser deposition (F-PLD). The influence of different substrate temperatures on the growth and composition of DLC films was analysed using Raman spectroscopy and electron energy loss spectroscopy (EELS). The increase of substrate temperature leads to an increase in sp 2 carbon bond hybridisation...
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