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Charge trapping flash memory devices using (HfO 2 ) 0.9 (Al 2 O 3 ) 0.1 as the charge trapping layer were fabricated, and the effect of post-annealing atmospheres (NH 3 and N 2 ) on its charge storage characteristics was investigated. It was found that NH 3 annealed memory device showed a larger memory window of 7.3 V and improved data...
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