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Thin SiO 2 (8-12nm) and the SiO 2 /Si interface, formed on rf hydrogen plasma-cleaned (100)Si and (111)Si by 850 o C dry oxidation in the initial growth regime are studied. Multiple-angle spectroscopic ellipsometry in the 280-632.8nm spectral range is applied to investigate the film and the interface properties. Comparison to oxides on standard RCA-cleaned Si shows that the...
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