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Transparent and conductive Al-doped ZnO (AZO) films have been grown with various thicknesses between 0.3 and 1.1 μm by magnetron sputtering at room temperature onto soda lime glass substrates. After deposition, the samples have been annealed at temperatures ranging from 150 to 450 °C in air or vacuum. The optical, electrical, and structural characteristics of the AZO coatings have been analyzed as...
The effect of implantation parameters on damage build-up in ZnO bombarded with Bi and Er ions is studied by Rutherford backscattering/channelling spectrometry. The results show that the damage accumulation behaviour in ZnO is different dramatically from that in other semiconductors. In particular, a variation of implantation parameters, such as collision cascade density, sample temperature and ion...
ZnO thin films were deposited on glass substrates at room temperature (RT) ∼500°C by pulsed laser deposition (PLD) technique and then were annealed at 150–450°C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results...
ZnO thin films were grown on Si (1 1 1) substrates by pulsed laser deposition (PLD) at various laser repetition frequency in order to investigate the structural and optical properties of the films. The optical properties of the films were studied by photoluminescence spectra using a 325 nm He–Cd laser. The structural properties of the films were investigated by XRD measurement. The results suggest...
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