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We present the electrical and structural characterization of Al x Ga 1−x As layers grown in a metallic-arsenic-based-MOCVD system. The gallium and aluminium precursors were the metal-organic compounds trimethylgallium (TMGa) and trimethylaluminium (TMAl), respectively. Al x Ga 1−x As layers that were grown at temperatures less than 750°C present a high electrical resistivity...
Ohmic contacts with a palladium (Pd) diffusion barrier were formed on GaAs substrates. The metal-contact structure consists of a gold-based-alloy/Pd/semiconductor-substrate. Characteristics of the deposited Pd films by “electroless” deposition on semiconductor-substrates are reported. SIMS analysis realized on the metal-semiconductor structures demonstrates the capability of the Pd films to act as...
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