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The quantity of silicon lost during evaporation is greater than theoretical expectation during the purification of metallurgical grade silicon by vacuum evaporation. In this paper, silicon volatilization rates were measured for evaporation times of 30, 45 and 60 min at 1723, 1773 and 1823 K, respectively. Results indicate that volatilization rates determined in our experiments are one or two orders...
The formation and subsequent time-evolution of silicon carbide nanocrystals grown on a silicon surface by high-temperature vacuum annealing was investigated, with the effects of carbon contamination on the properties of these nanostructures being examined. The presence of higher contaminant levels during an annealing step was found to strongly enhance the nanocrystal growth rate, yet conversely to...
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