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The n-type doped silicon thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) technique at high and low H 2 dilutions. High H 2 dilution resulted in n + nanocrystalline silicon films (n + nc-Si:H) with the lower resistivity (ρ ∼0.7 Ω cm) compared to that of doped amorphous silicon films (∼900 Ω cm) grown at low H 2 dilution. The change...
Yttrium trioxide (Y 2 O 3 ) thin films have been deposited on silicon (111) at different RF powers and the sputtering pressures by RF magnetron sputtering. The influences of the RF power and the sputtering pressures on the structural and optical properties of Y 2 O 3 thin films were investigated by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic...
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