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We report, for the first time, results on transparent ZnO:Al thin films deposited on polyester (Mylar type D, 100μm thickness) substrates at room temperature by magnetron sputtering. The structural, optical and electrical properties of the deposited films have been studied. The samples are polycrystalline with a hexagonal wurtzite structure and a strong crystallographic c-axis orientation (002) perpendicular...
In this work we studied the influence of the dopant elements and concentration on the properties of ZnO thin film deposited by spray pyrolysis. The results show that the doping affects the thin films properties mainly the electrical ones, function of dopant concentration and nature. The most important changes were observed for films doped with 1at% of indium which exhibit a resistivity of 1.9x10 ...
In this work, we report the electro-optical properties exhibited by ZnO:A1 thin films deposited by r.f. magnetron sputtering. The effect of the deposition parameters on the properties of the films were studied with the aim to determine the most suitable deposition conditions to obtain ZnO:Al thin films with a low resistivity and high transmittance, characteristics required for applications on optoelectronic...
High sheet resistance multilayers consisting of Ga-doped ZnO (ZnO:Ga) and Ga-Y-codoped ZnO (ZnO:Ga,Y) films were investigated. These films were deposited by DC magnetron sputtering. The sheet resistances of substrate/(ZnO:Ga,Y)/(ZnO:Ga)/(ZnO:Ga,Y) multilayers are adjustable in the range of 450-1600Ω/sq by choosing the proper thickness of the (ZnO:Ga) layer. This is because the (ZnO:Ga,Y) layer has...
We present the relationship between parameters of reactive RF diode sputtering from a zinc oxide (ZnO) target and the crystalline, electrical and optical properties of n-/p-type ZnO thin films. The properties of the ZnO thin films depended on RF power, substrate temperature and, particularly, on working gas mixtures of Ar/O 2 and of Ar/N 2 . Sputtering in Ar+O 2 working gas...
Aluminium-doped zinc oxide (AZO) thin films have been prepared by pulsed magnetron sputtering from a ceramic oxide target in pure argon atmosphere. Sputtering processes were performed in current or voltage regulation modes at different pulsing frequencies up to 200kHz. Several growth parameters (discharge power, substrate temperature and growth rate) as well as AZO film properties (crystalline structure,...
Zinc oxide transparent conducting thin films co-doped with aluminum and ruthenium were grown on polyethylene terephthalate substrates at room temperature using RF magnetron sputtering. The crystal growth and physical properties of the films were investigated with respect to the variation of discharge power density from 1.5 to 6.1W/cm 2 and sputtering pressure from 0.13 to 2.0Pa. X-ray diffraction...
Zinc oxide (ZnO) thin films have been grown on Si (100) substrates using a femto-second pulsed laser deposition (fsPLD) technique. The effects of substrate temperature and laser energy on the structural, surface morphological and optical properties of the films are discussed. The X-ray diffraction results show that the films are highly c-axis oriented when grown at 80°C and (103)-oriented at 500°C...
Transparent conducting aluminum-doped zinc oxide (ZnO:Al) films have been prepared on polycarbonate (PC) substrates by pulsed laser deposition technique at low substrate temperature (room-100°C); Nd-YAG laser with wavelength of 1064nm was used as laser source. The experiments were performed at various oxygen pressures (3pa, 5pa, and 7Pa). In order to study the influence of the process parameters on...
Zinc oxide (ZnO) nanostructures were grown on vertically aligned carbon nanotubes (CNTs) using thermal chemical vapor deposition (CVD) to enhance the field emission characteristics. The shape of ZnO nanostructure was tapered. Scanning electron microscopy (SEM) image showed the ZnO nanostructures were grown onto CNT surface uniformly. The field electron emission of pristine CNTs and ZnO-coated CNTs...
ZnO thin films were prepared by reactive RF sputtering on thermally oxidized Si for gas sensing applications. Three VOC vapors were chosen to investigate the response behavior of the prepared ZnO. Acetone, isopropanol and ethanol were tested, and the sensitivity of the sensor toward acetone was the highest (S ∼ 100) for 500 ppm acetone at 400 °C. The largest sensitivity was achieved at 400 °C for...
Highly transparent ZnO nanomaterials have been successfully dispersed in the form of nanoparticles and nanorods on InGaN/GaN-based surface mounted light emitting diodes (SM-LEDs). An effortless spin-coating technique is employed to disperse the ZnO nanoparticle layers, and a well-known hydrothermal technique is used for growing the ZnO nanorods. The layer thickness and the light transmission at a...
The ZnO films were fabricated by pulsed laser deposition at various oxygen pressure on single crystal silicon substrate. The structural and optical properties were investigated at various measurement temperature. The results showed that all the films have good c-axis preferred orientation. The different defects in films were fabricated which can be caused by various oxygen pressure. The films deposited...
Sb-doped ZnO film was obtained by CVT technique in a closed tube, and the temperature dependence of its photoluminescence spectrum was also investigated. The Sb-related photoluminescence peaks were observed. The peaks occurred at 3.352, 3.312, 3.240 and 3.168 eV were respectively assigned to the neutral acceptor-bound excition, free electron to acceptor transitions, and the first- and second- longitudinal...
We fabricated an enhancement-mode thin film transistor (TFT) using ZnO as an active channel layer deposited by radio frequency (rf) magnetron sputtering. The NH 3 plasma passivation was performed in order to improve the electrical properties of the ZnO TFTs. We observed that the NH 3 plasma treated ZnO TFTs revealed improved device performances, which include the field effect mobility...
Structural and spectroscopic modifications of nanocrystalline (nc) ZnO films induced by Swift heavy ion (SHI) irradiation is reported. Films were irradiated at incremented ion fluences. Structural study reveals that the nanocrystals become more oriented at low fluences, while a release of strain and decrease in grain size is observed at high fluence. The surface morphology study also shows a decrease...
The size controlled zinc oxide nanoparticle is synthesized in the isothermal evaporation method with albumen (egg white). This method is simple and cost effective for synthesis of ZnO nano powder. The egg white foam was assisted to increase the reaction rate and produce the zinc oxide nano powder. This method helps to attain the particle size in the range 13–28 nm. The results from X-ray diffraction...
Organic light-emitting diode-zinc oxide (OLED–ZnO) hybrid nanomaterials are successfully prepared by the incorporation of ZnO (a few weight percent) under simple and mild reaction conditions. Three different types of organic light-emitting materials, Fluorescein, Tris(8-hydroxyquinoline) aluminum, and poly(fluoresceinyl terephthalyl benzoate-co-bisphenol A terephthalate) are chosen to prepare the...
The paper deals with the pulsed laser deposition technology and in this special case the substrate was cooled at cryogenic temperature by liquid nitrogen during the deposition process. This approach is proper for growth of highly disordered structures with new physical properties and zinc oxide was applied as experimental example for demonstration. Films were deposited on different substrates: Si...
ZnO thin films with different buffer layer thicknesses were grown on Si and porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE). The effects of PS and buffer layer thickness on the structural and optical properties of ZnO thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). The ZnO...
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