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A modified scheme to tune the Schottky Barrier Height (SBH) of NiSi effectively by means of dopant segregation (DS) technique is presented. This scheme consists of the following steps: (1) The deposited Ni films undergo a rapid thermal anneal (RTA1) at 300 °C/60 s to form Ni-rich silicide followed by removal of un-reacted Ni; (2) implant boron (B) or arsenic (As) into pre-formed Ni-rich silicide and...
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