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The article deals with structural properties of ZnO thin layers prepared on Si (111) by pulsed laser deposition at different pressures (1–35Pa) of ambient oxygen in the deposition chamber. The growth temperature was 400°C and a pulsed Nd:YAG laser was used at a wavelength of 355nm. Two parallel sets of samples deposited by ablation of different targets (a sintered ceramic pellet of ZnO and a pure...
Surface morphology of AlN films, synthesized on Si substrates by pulsed laser deposition, has been examined by recording atomic-force-microscopy (AFM) images. The influence of N 2 ambient pressure, ranging from 5×10 −4 Pa to 10Pa, is reflected well in the alteration of the surface roughness and size of crystallites of the AlN films. A tendency of a decrease in the surface roughness...
Polycrystalline thin films of zinc oxide were deposited by pulsed laser deposition onto silicon substrates at different oxygen partial pressures in the range of 1–35Pa. For ablation of the sintered zinc oxide target a pulsed Nd:YAG laser was used. Other processing parameters such as laser pulse energy, pulse repetition rate, substrate temperature and deposition pressure were identical. The effect...
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