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During reactive sputtering, addition of the reactive gas results in a target voltage change. This effect finds its origin in the modification of the gas composition but also in the change of the target condition. In this paper, we focus on the target voltage changes during magnetron sputtering of silver in an argon/nitrogen plasma. In the first second during the nitrogen addition, we notice a decrease...
The dynamical characteristics of a vacuum system in respect of pressure are critical for studying the dynamical desorption processes such as those produced by mechanically stimulated desorption in vacuum. In the present work, a mathematical model of the instant pressure in a vacuum system has been developed assuming an intermittent square-wave desorbed gas flow. In this case, the duration of the pressure...
The effects of electron beam surface hardening treatment on the microstructure and hardness of AISI D3 tool steel have been investigated in this paper. The results showed that the microstructure of the hardened layer consisted of martensite, a dispersion of fine carbides and retained austensite while the transition area mainly consisted of tempered sorbite. Also, the microhardness of the hardened...
The present review of methods reveals some new theoretical aspects and findings concerning suppression of the hydrogen outgassing rate q out from austenitic stainless steels in relation to the ultrahigh vacuum and extreme high vacuum.The review includes work on thermal treatment and modelling, permeation rate and the role of surfaces, diffusion barriers and coatings.
The effects of three different gas environments formed by pure argon, helium and nitrogen with variable pressures up to 300Pa inside the specimen chamber of a scanning electron microscope on the electron beam parameters were investigated and compared using Monte Carlo calculations. The calculations show that the skirt of the electron beam probe is nearly independent of pressure in the case of helium,...
Heat flow of JxB gas-arc discharge in helium gas is investigated because this discharge was developed for the efficient production of fullerenes, in which the control of the hot-gas reaction is an important issue. Heat flux around the arc is measured as functions of position, magnetic field and discharge parameters by using a water-cooled calorimetric probe. As a result, heat flux from the arc is...
In the present paper, strain-compensated multi-quantum wells (SCMQW) InGaAs/GaAsP grown by low-pressure metal organic chemical vapour deposition (MOCVD) were used as the active layers of near infrared LED. The single nude LED chip was put down on the copper header p-side down, using a GaAs transparent substrate and AuBe alloy mirror reflector. The forward voltage under a bias current of 20mA was measured...
Polyethylene terephthalane (PET) has been modified with W ions from a metal vapour arc source (MEVVA). W ions were implanted at 136keV to doses ranging from 5x10 15 to 2x10 17 /cm 2 . The surface of the implanted PET darkened with increasing ion dose, when the metal ion dose is greater than 1x10 17 cm -2 the colour changed to metallic bright...
CdTe thin films were prepared by thermal evaporation under a vacuum of 10 -6 Torr and with a deposition rate of about 60nm/min. X-ray diffraction studies of the as-deposited films revealed polycrystalline films with cubic structure. The effect of heat treatment with or without CdCl 2 enhances the grain size and improves the crystallinity of the films. Moreover, the activation...
Surface rapid solidification microstructures of AISI 321 austenitic stainless steel and 2024 aluminum alloy have been investigated by electron beam remelting process and optical microscopy observation. It is indicated that the morphologies of the melted layer of both stainless steel and aluminum alloy change dramatically compared to the original materials. Also, the microstructures were greatly refined...
Carbon nitride thin films were synthesized by hot filament assisted radio frequency plasma chemical vapour deposition using methane and nitrogen gas mixture on silicon and glass substrates. The films were deposited at different substrate bias and at different substrate temperatures. At higher substrate bias (>-120V) there was no deposition on the substrate, but complete etching of the deposited...
ZnO films were grown on C-plane sapphire substrate by plasma-assisted MOCVD. The films was characterized by XRD, photoluminescence (PL) and the optical transmission spectrum. We found tensile strain in the sample, which had been annealed many times during the growth process, while there is compressive strain in the sample, which was annealed only one time after growth. The PL spectra at room temperature...
The results of an investigation of the modified surface layers of high-speed steel AISI M2 after various kinds of ion implantation (high current ion implantation (HCII), plasma immersion ion implantation (PIII), implantation with separated ion beams (SIB) are presented. The results partially from our previous works (HCII, PIII) and some new data (HCII, PIII, SIB) are summarized here to compare the...
The Al 3 Hf phase was formed by Hf ions implantation into Al film with a current density of 64μA/cm 2 to a dose of 7x10 17 ions/cm 2 using a metal vacuum vapor arc ion source. The surface hardness of Al film increased after Hf ions implantation. The quantitative depth profile of the formed Al 3 Hf phase was obtained using the quantitative structure and...
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