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Zinc oxide (ZnO) films were grown on silicon (100) substrates by single-source chemical vapor deposition (SSCVD). X-ray diffraction (XRD) showed that ZnO thin films have a polycrystalline hexagonal wurtzite structure with (100) and (101) orientation, i.e., a–b-axis orientation. Atomic force microscopy (AFM) and scanning electronic microscopy (SEM) showed the films to be of relatively high density...
ZnO films were prepared on p-Si substrates using pulsed laser deposition (PLD) and n-ZnO/p-Si heterojunctions were fabricated at different oxygen partial pressures. The effects of oxygen pressures on crystallinity and surface morphology of ZnO films and the I–V characteristics of n-ZnO/p-Si heterojunctions were studied. It was found that the films grown in the oxygen pressure range from 10 −5...
The magnetization reversal of the free layer was studied in a pseudo spin-valve Gd–Co/Cu/Co structure prepared by thermal evaporation. The uniaxial magnetic anisotropy in a plane of the film was induced by applying the magnetic field during deposition. The angular dependence of the free Co layer coercivity was observed to be consistent with the Stoner–Wohlfarth rotation model. The switching field...
A niobium modified layer on a pure titanium surface was obtained by means of a double-glow plasma surface alloying technique. Microstructure and phases resident in the alloy layer were analyzed. The processing parameters and effects of cathode sputtering before the diffusion process were also studied. The results show that the surface niobium content in the modified layer is similar to that in the...
SnO 2 /Pd composite films were synthesized by d.c. sputtering of a SnO 2 target followed by thermal evaporation of a thin layer of Pd on top of it. This structure, deposited on Si wafer with 300μm SiO 2 on the top, was subjected to rapid thermal annealing at 573K for 5min for the incorporation of Pd in SnO 2 . The films were characterized by microstructural, optical,...
This paper presents results of the effect of electron beam irradiation under UHV conditions on InGaAs/GaAs and GaAsN/GaAs systems using Auger electron spectroscopy (AES) and the electron energy loss spectroscopy (EELS) as surface analytical techniques. The ternary compounds In 0.53 Ga 0.47 As and In 0.2 Ga 0.8 As were irradiated by an electron beam under identical conditions...
A physical co-sputter deposition process under a relevant working gas pressure condition was used to produce a multi-component thin film with a longitudinally self-organized microstructure. In this paper, Co–Si–O thin films were prepared by radio frequency (RF) magnetron sputtering, and their growth structures were studied by means of SEM, TEM, XRD and XPS. The microstructural changes in the Co–Si–O...
Frequency domain reflectometry (FDR) is used to compare the electrical characteristics of five industrial plasma chambers, without the plasma present, used in the manufacture of semiconductors devices at Intel-Ireland. A scalar network analyzer (SNA), consisting of a tracking generator/spectrum analyzer and a radio frequency bridge was used to sweep the chambers from 1MHz to 1GHz. The non-invasive...
The isothermal oxidation behaviour of EB-PVD NiCoCrAlY bond coat on nickel based superalloy at different treatment conditions were studied at 1100°C up to 100h. The reaction products were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) with energy dispersive X-ray analysis (EDS). It is found that after 10h oxidation, while a protective alumina layer was developed on...
In this paper, aluminium macro powders in the size range between 300 and 500μm are processed by thermal plasma processing. A 40kW DC non-transferred DC plasma spray torch was used to get the macro powders. The morphology and the size of the powders are discussed and the results are reported. The powders produced are doughnut shaped. The size ranges between 300 and 500μm. The macro particle size is...
The effects of substrate temperature on the structure and tribological properties of Ag films deposited at low temperatures (LT, 130–217K) by arc ion plating (AIP) have been studied. The structure and morphology of the Ag films were analyzed by X-ray diffraction (XRD), transmission electron microscopy (TEM) and field emission scanning electron microscope (FESEM). The results showed that there exist...
Low-energy hydrogen ion bombardment is used to clean GaAs surfaces. The hydrogen ions produce contamination-free surfaces without changes in surface composition (stoichiometry) and surface roughness. The wafers were brought into contact at room temperature after cleaning under ultra-high vacuum (UHV), and bonded over the whole area (2inches) without application of external mechanical pressure. After...
High-aligned carbon nanotubes film with netlike bulges made of catalyst particles has been synthesized on a silica wafer by pyrolyzing ferrocene/melamine mixtures. The structure and composition of carbon nanotubes are investigated by scanning electron microscopy, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and electron energy-loss spectroscopy (EELS). It is found...
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