A phase-change memory (PCM) material, in device, has been prepared by melt-quenching technique, which has a better glass forming ability. The device is formed on glass substrate coated with ITO as bottom electrode and Al as top electrode. This device switches with a threshold voltage of 4.5V in voltage sweep mode, with resistance difference of 3 orders. This device has set and resettable state for several cycles, with input current of 0.5mA for SET and 15mA RESET state. And the device data retention with various temperature shows that is likely to be a thermally suitable material for phase-change memory applications.