The effect on electrical and magnetic properties of Gd 3 + doping of LaNiO 3 was studied for Gd concentration x 0.1. The electrical resistivity ρ increases with x, being dρ/dT > 0 for all samples studied. The magnetic susceptibilities were fitted by the function χ(T) = χ 0 -aT 2 + xC G d ( 3 + )/IT. The EPR results are discussed in terms of the Gd 3 + paramagnetic moment interactions with the crystal field and with the conduction electron spins.