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In this paper a novel technique to study epitaxial growth is presented. Specular reflection of low-energy ions was used to characterize the surface during growth. Angular scans of the specular yield of 5.0keV Ar + scattered from a Ag(100) surface were obtained. The measurements were interpreted by full three-dimensional trajectory calculations using the binary-collision approximation (BCA). The homoepitaxial growth of Ag(100) was studied for various substrate temperatures and deposition rates. The results were compared with Dynamical Monte Carlo (DMC) growth calculations using a many-body potential. For this purpose the specular reflection coefficient of subsequent snapshots obtained from the DMC calculations was determined by BCA calculations.