We report on the - to our knowledge - first successful realization of Si 0 . 5 4 Ge 0 . 4 5 C 0 . 0 1 2 p-channel MODFETs directly on Si without any SiGe buffer layer. The incorporation of small amounts of C into SiGe layers with high Ge content reduces the compressive strain, resulting in an improved stability, an increased band gap ΔE g and a sufficient valence band discontinuity ΔE V . Typical Hall mobilities and hole densities are μ h (300K)=113cm 2 /Vs, p s (300K)=1.4x10 1 2 cm - 2 , μ h (77K)=236cm 2 /Vs, p s (77K)=0.9x10 1 2 cm - 2 . Room temperature transconductances of g m e =57mS/mm and saturation currents of I D S S =40mA/mm, and respective 77K data of g m e =70mS/mm and I D S S =63mA/mm are found for the 0.75μm gate-length, non-recessed test devices, which have been fabricated in a non-self-aligned process.