The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A two-dimensional profile simulator [B.E. Volland et al., J. Vac. Sci. Technol. B 20 (6) (2002) 3111-3117] was applied to the simulation of the etching of high aspect ratio trenches into silicon by means of a gas chopping etching technique. Reactant transport is modeled by a two-dimensional diffuse reflection model in case of neutrals and by direct line-of-sight shadowing in case of ions. Good agreement...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.